Atomic Layer Deposition of MoS <sub>2</sub> Decorated TiO <sub>2</sub> Nanotubes for Photoelectrochemical Water Splitting
نویسندگان
چکیده
A thermal atomic layer deposition (ALD) process to fabricate MoS2 thin films is successfully demonstrated by using cycloheptatriene molybdenum tricarbonyl (C7H8Mo(CO)3) and H2S as precursors at an ALD temperature below 300 °C. The systematically investigated, showing a typical self-limiting characteristic within window of 225–285 °C high growth-per-cycle 0.11 nm. as-deposited are amorphous while they can be crystallized in situ sulfurization with low prototypical application the developed constructing MoS2/TiO2 heterostructure through depositing onto anodized TiO2 nanotubes for photoelectrochemical water splitting. heterostructures exhibit approximately three times superior performance than pristine nanotubes. This attributed enhanced visible light-harvesting ability improved separation photo-generated charge carriers interface, which affirmed staggering gap (type II) between probed ultraviolet photoelectron spectroscopy.
منابع مشابه
Atomic Layer Deposition of TiO
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ژورنال
عنوان ژورنال: Advanced Materials Interfaces
سال: 2022
ISSN: ['2196-7350']
DOI: https://doi.org/10.1002/admi.202200643